EP Gate Drive Transformers

• Designed for high switching speed, transformer coupled MOSFET and IGBT gate drive circuits.• Operating frequency: 50 kHz – 2 MHz• Primary to secondary isolation: 1500 Vdc

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1、Core material Ferrite

2、Terminations RoHS compliant tin-silver over tin over nickel over phos

bronze. Other terminations available at additional cost.

3、Weight 535 – 615 mg

4、Ambient temperature –40°C to +125°C

5、Storage temperature Component: –40°C to +125°C.

6、Tape and reel packaging: –40°C to +80°C

7、Resistance to soldering heat Max three 40 second reflows at

+260°C, parts cooled to room temperature between cycles

8、Moisture Sensitivity Level (MSL) 1 (unlimited floor life at<30°C /

85% relative humidity)